Your search returned 25 records. Click on the hyperlinks to view further details of Titles..

 

Magazine Name : Ieee Transactions On Electron Devices

Year : 2004 Volume number : 51 Issue: 11

Thermal Modeling And Measurement Of Aigan-Gan Hfets Built On Sapphire And Sic Substrates (Article)
Subject: Compound Semiconductor Devices
Author: J Park     
page:      1753 - 1759
Numerical Analysis Of Slow Current Transients And Power Compression In Gaas Fets (Article)
Subject: Compound Semiconductor Devices
Author: Y Kazami     
page:      1760 - 1764
A Through-Wafer Interconnect In Silicon For Rfics (Article)
Subject: Materials Processing And Packaging
Author: J H Wu     
page:      1765 - 1771
Analytical Modeling Of Single Electron Transistor For Hybrid Cmos-Set Analog Ic Design (Article)
Subject: Nanoelectronics
Author: S Mahapatra     
page:      1772 - 1782
Metal Gate Work Function Engineering On Gate Leakage Of Mosfets (Article)
Subject: Silicon Devices
Author: Y.-T Hou     
page:      1783 - 1789
A 90-Nm Logic Technology Featuring Strained-Silicon (Article)
Subject: Silicon Devices
Author: S E Thompson     
page:      1790 - 1797
A Simple Approach To Fabrication Of High-Quality Hfsion Gate Dielectrics With Improved Nmosfet Performances (Article)
Subject: Silicon Devices
Author: X Wang     
page:      1798 - 1804
A Poly-Silicon Tft With A Sub-5-Nm Thick Channel For Low-Power Gain Cell Memory In Mobile Applications (Article)
Subject: Silicon Devices
Author: T Ishii     
page:      1805 - 1810
Nvm Characteristics Of Single-Mosfet Cells Using Nitride Spacers With Gate-To-Drain Noi (Article)
Subject: Silicon Devices
Author: S.-C Hsieh     
page:      1811 - 1817
Silicon Heterojunction Solar Cell: A New Buffer Layer Concept With Low-Temperature Epitaxial Silicon (Article)
Subject: Silicon Devices
Author: E Centurioni     
page:      1818 - 1824
On The High-Temperature (To 300 Oc) Characteristics Of Sige Hbts (Article)
Subject: Silicon Devices
Author: T Chen     
page:      1825 - 1832
Stable Threshold Voltage Extraction Using Tikhonov'S Regularization Theory (Article)
Subject: Silicon Devices
Author: W Y Choi     
page:      1833 - 1839
Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded In Hfaio High-K Tunneling And Control Oxides: Device Fabrication And Electrical Performance (Article)
Subject: Silicon Devices
Author: J. H. Chen     
page:      1840 - 1848
Optimization Of The Nonverlap Length In Decanano Mos Devices With 2-D Qm Simulations (Article)
Subject: Silicon Devices
Author: R Gusmeroli     
page:      1849 - 1855
On The Conduction Mechanism In Polycrystalling Silicon Thin-Film Transistors (Article)
Subject: Silicon Devices
Author: A. J. Walker     
page:      1856 - 1866
Effects Of Material Interfaces In Cu/Low-K Damascene Interconnects On Their Performance And Reliability (Article)
Subject: Silicon Devices
Author: M Tada     
page:      1867 - 1876
Ultrathin Aluminum Oxide Gate Dielectric On N-Type 4h-Sic Prepared By Low Thermal Budget Nitric Acid Oxidation (Article)
Subject: Silicon Devices
Author: S W Huang     
page:      1877 - 1882
Effects Of Ti Addition On Via Reliability In Cu Dual Damascene Interconnects (Article)
Subject: Silicon , Silicon Devices
Author: Masashi Ueki     
page:      1883 - 1891
Electrical Characterization Of Polymer-Based Fets Fabricated By Spin-Coating Poly(3-Alkylthiophene)S (Article)
Subject: Solid-State Device Phenomena
Author: M.J. Deen     
page:      1892 - 1901
Compact Physical Models For Multilevel Interconnect Crosstalk In Gigascale Intergation (Gsi) (Article)
Subject: Solid-State Device Phenomena
Author: Azad Naeemi     
page:      1902 - 1912
High Breakdown Voltage Undoped Algan-Gan Power Hemt On Sapphire Substrate And Its Demonstration For Dc-Dc Converter Application (Article)
Subject: Solid-State Power And High Voltage
Author: Waturu Saito     
page:      1913 - 1917
Cad Of Tap Helix Circuits For Traveling Wave Tubes By Convolution Methods (Article)
Subject: Vacuum Electron Devices
Author: T Wessel-Berg     
page:      1918 - 1927
Electrothermal Characteristics Of Strained-Si Mosfets In High-Current Operation (Article)
Subject: Brief Description
Author: C.-H Choi     
page:      1928 - 1930
Investigation Of The Four-Gate Action In G-4 Fets (Article)
Subject: Brief Description
Author: B Dufrene     
page:      1931 - 1934
Characteristics Of An Inp-Ingaas-Ingaasp Hbt (Article)
Subject: Brief Description
Author: J.Y Chen     
page:      1935 - 1938